C and Si both have same lattice structure, having 4 bonding electrons in each. However, 
is insulator whereas Si is intrinsic semiconductor. This is because [2012]
A
The four bonding electrons in the case of 
lie in the third orbit, whereas for Si they lie in the fourth orbit
lie in the third orbit, whereas for Si they lie in the fourth orbit
B
In case of 
the valance band is not completely filled at absolute zero temperature
the valance band is not completely filled at absolute zero temperature
C
In case of 
the conduction band is partly filled even at absolute zero temperature
the conduction band is partly filled even at absolute zero temperature
D
The four bonding electrons in the case of 
lie in the second orbit, whereas in the case of Si they lie in the third orbit
lie in the second orbit, whereas in the case of Si they lie in the third orbit
Text Solution
Verified by ExpertsThe correct answer is:
D
The four bonding electrons in the case of 
lie in the second orbit, whereas in case of 
they lies in the third orbit so loosely bounded valency electron in 
as compared to 
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